* 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A
* Low Gate Charge (Typ. 13 nC)
* Low Crss (Typ. 5.5 pF)
* 100% Avalanche Tested June 2014.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.

3N80

3N80A

3N80Z

3N81

3N82

3N83

3N100E

3N1012

3N10L26

3N120-E3

3N124

3N125

3N126